CMOS stands for C omplementary M etal-O xide-S emiconductor. Metal-Oxide Semiconductor refers to the construction method of the component Field-Effect Transistors (MOSFETs), and Complementary means that CMOS uses both n-type (nMOS) and p-type (pMOS) transistors. Older designs had used only n-type transistors, and are referred to as NMOS logic.

n-type MOSFETs are active (conductive) when their input voltage is high, while p-type MOSFETs are active when their input voltage is low.

All CMOS gates are arranged in two parts: the pull-up network (PUN), built from p-type transistors and connect to source; and the pull-down network (PDN), built from n-type transistors and connected to ground (also called drain). The two parts are logical duals of each other, so that if the PUN is active, then the PDN is inactive, and vice-versa. In this way there can never be a direct path between source and ground (in any steady state).

The biggest advantage of CMOS over NMOS is that CMOS has a rapid change from both hi-to-low and from low-to-hi. NMOS transitions only slowly from low-to-hi (because it uses a resistor in place of a PUN), and since overall circuit speed must take into account the worst case, NMOS circuits must be much slower.